DMN26D0UDJ new product dual n-channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = +25c 20v 3.0 ? @ v gs = 4.5v 240ma 6.0 ? @ v gs = 1.8v 180ma description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? dc-dc converters ? power management functions features ? dual n-channel mosfet ? low on-resistance: ? 3.0 ? ? @ 4.5v ? 4.0 ? ? @ 2.5v ? 6.0 ? ? @ ? 1.8v ? 10 ? ? @ ? 1.5v ? very low gate threshold voltage, 1.05v max ? low input capacitance ? fast switching speed ? ultra-small surface mount package ? esd protected gate (hbm 300v) ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) mechanical data ? case: sot963 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.0027 grams (approximate) sot963 top view top view schematic and transistor diagram esd protected s 1 d 1 d 2 s 2 g 1 g 2 ????????????????????? s m d ty p e mosfets mos mosfets mos
new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain source voltage v dss 20 v gate-source voltage v gss ? 10 v continuous drain current (note 6) v gs = 4.5v steady state t a = +25c t a = +70c i d 240 190 ma continuous drain current (note 6) v gs = 1.8v steady state t a = +25c t a = +70c i d 180 140 ma pulsed drain current - t p = 10s i dm 805 ma thermal characteristics characteristic symbol value unit total power dissipation (note 6) p d 300 mw thermal resistance, junction to ambient (note 6) r ja 409 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 100 a zero gate voltage drain current @ t j = +25c @t j = +85c (note 8) i dss ? ? 500 1.7 na a v ds = 20v, v gs = 0v v ds = 2.6v, v gs = 0v gate-body leakage i gss ? ? ? 1 ? 100 a na v gs = 10v, v ds = 0v v gs = 5v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 0.45 0.8 1.05 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? 1.8 3.0 ? v gs = 4.5v, i d = 100ma ?? 2.5 4.0 v gs = 2.5v, i d = 50ma ?? 3.4 6.0 v gs = 1.8v, i d = 20ma ?? 4.7 10.0 v gs = 1.5v, i d = 10ma ?? 9.5 ? v gs = 1.2v, i d = 1ma forward transconductance |y fs | 180 240 ? ms v ds =10v, i d = 0.1a source-drain diode forward voltage v sd 0.5 0.8 1.0 v v gs = 0v, i s = 10ma dynamic characteristics (note 8) input capacitance c iss ? 14.1 ? pf v ds = 15v, v gs = 0v f = 1.0mhz output capacitance c oss ? 2.9 ? pf reverse transfer capacitance c rss ? 1.6 ? pf switching characteristics, v gs = 4.5v (note 8) turn-on delay time t d ( on ) ? 3.8 ? ns v gs = 4.5v, v dd = 10v i d = 200ma, r g = 2.0 ? rise time t r ? 7.9 ? turn-off delay time t d ( off ) ? 13.4 ? fall time t f ?? 15.2 ?? s m d ty p e mosfets mos mosfets mos
new product 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.5 1 1.5 2 2.5 3 fig. 1 typical output characteristic v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d v = 2.0v gs v = 3.0v gs v = 4.5v gs v = 8v gs v = 2.5v gs v = 1.5v gs 0 0.1 0.2 0.3 0.4 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs i, d r ain c u r r en t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -10v ds 0 1 2 3 4 5 6 7 8 9 10 1 10 100 1,000 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (ma) d r , drain-source on-resistance ( ) ds(on) ? v = 4.5v gs v = 1.2v gs v = 1.5v gs v = 2.5v gs v = 1.8v gs 0 1 2 3 4 0.01 0.1 1 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson v = 2.5v i = 150ma gs d v = 4.5v i = 500ma gs d 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 r , d r ain-s o u r c e on-resistance ( ) dson ? fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v = 4.5v i = 500ma gs d v = 2.5v i = 150ma gs d s m d ty p e mosfets mos mosfets mos
new product package outline dimensions 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 1ma d i = 250a d 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd i, s o u r c e c u r r en t (a) s t = 25c a 0 5 10 15 20 0 5 10 15 20 fig. 9 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) c iss c rss c oss f = 1mhz 0 2 4 6 8 10 12 14 16 18 20 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 0.1 10 100 1,000 10,000 i, leaka g e c u r r en t (na) dss 1 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a sot963 dim min max typ a 0.40 0.50 0.45 a1 0 0.05 - c 0.120 0.180 0.150 d 0.95 1.05 1.00 e 0.95 1.05 1.00 e1 0.75 0.85 0.80 l 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 typ e1 0.70 typ all dimensions in mm l c e d e1 e e1 b (6 places) a a1 s m d ty p e mosfets mos mosfets mos
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